- 您现在的位置：买卖IC网 > Sheet目录445 > IRFIZ34E (International Rectifier)MOSFET N-CH 60V 21A TO220FP
IRFIZ34E
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
60
–––
–––
0.052
––– V V GS = 0V, I D = 250μA
––– V/°C Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.042
?
V GS = 10V, I D = 11A ?
––– R G = 18 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 16A ?
25 V DS = 60V, V GS = 0V
μA
250 V DS = 48V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
34 I D = 16A
6.8 nC V DS = 44V
14 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 28V
––– I D = 16A
ns
––– R D = 1.8 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
––– V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
700
240
100
12
––– V GS = 0V
pF
––– ? = 1.0MHz, See Fig. 5 ?
––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
21
100
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.6 V T J = 25°C, I S = 11A, V GS = 0V ?
––– 57 86 ns T J = 25°C, I F = 16A
––– 130 200 μC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 610μH
R G = 25 ? , I AS = 16A. (See Figure 12)
? I SD ≤ 16A, di/dt ≤ 420A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRFZ34N data and test conditions
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRFIZ46NPBF
MOSFET N-CH 55V 33A TO220FP
IRFIZ46N
MOSFET N-CH 55V 33A TO220FP
IRFIZ48NPBF
MOSFET N-CH 55V 40A TO220FP
IRFIZ48N
MOSFET N-CH 55V 36A TO220FP
IRFL024NTR
MOSFET N-CH 55V 2.8A SOT223
IRFL1006TR
MOSFET N-CH 60V 1.6A SOT223
IRFL4105PBF
MOSFET N-CH 55V 3.7A SOT223
IRFL4105
MOSFET N-CH 55V 3.7A SOT223
相关代理商/技术参数
IRFIZ34EPBF
功能描述:MOSFET 60V 1 N-CH HEXFET 42mOhms 2.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ34G
功能描述:MOSFET N-Chan 60V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ34G_09
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
IRFIZ34GPBF
功能描述:MOSFET N-Chan 60V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ34N
制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
IRFIZ34NHR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220
IRFIZ34NPBF
功能描述:MOSFET MOSFT 55V 19A 40mOhm 22.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ34NPBF
制造商:International Rectifier 功能描述:MOSFET